Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers
نویسندگان
چکیده
Solution-processed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) in the research stage often have large active areas. This results unusual gate leakage currents with high magnitudes that vary applied voltages. In this paper, we report an improved structure for solution-processed SWCNT-based TFTs. The current is resolved by patterning SWCNT layer to confine it channel region. For comparative purposes, compared a traditional whose unpatterned expands well beyond As TFT performance also varies oxide thickness, 90 nm and 300 thick oxides were considered. TFTs far lower than same dimensions (aside from area). Moreover, variation voltages resolved. Patterning layer, increasing reducing top electrode length all help prevent rapid dielectric breakdown. To take advantage of solution-based fabrication processes, electrodes our fabricated depositions. can be further future solution incubation time size.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11223719